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| ZM-PTZ3.6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES Features 1) Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption LL-41 Absolute Maximum Ratings (Ta = 25oC) Symbol Power Dissipation 1) Junction Temperature Storage Temperature Range Ptot Tj TS Value 1 150 -55 to +150 Unit W O O C C 1) Mounting density of other power components should be taken into consideration when laying out the pattern. SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 ZM-PTZ3.6B ~ ZM-PTZ36B Zener Voltage Range TYPE Min. ZM-PTZ3.6B ZM-PTZ3.9B ZM-PTZ4.3B ZM-PTZ4.7B ZM-PTZ5.1B ZM-PTZ5.6B ZM-PTZ6.2B ZM-PTZ6.8B ZM-PTZ7.5B ZM-PTZ8.2B ZM-PTZ9.1B ZM-PTZ10B ZM-PTZ11B ZM-PTZ12B ZM-PTZ13B ZM-PTZ15B ZM-PTZ16B ZM-PTZ18B ZM-PTZ20B ZM-PTZ22B ZM-PTZ24B ZM-PTZ27B ZM-PTZ30B ZM-PTZ33B ZM-PTZ36B 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13.3 14.7 16.2 18 20 22 24 27 30 33 36 Operating Resistance Zz () IZ (mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Reverse current IR (uA) Max. 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Vz (V) Max. 4 4.4 4.8 5.2 5.7 6.3 7 7.7 8.4 9.3 10.2 11.2 12.3 13.5 15 16.5 18.3 20.3 22.4 24.5 27.6 30.8 34 37 40 IZ (mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Max. 15 15 15 10 8 8 6 6 4 4 6 6 8 8 10 10 12 12 14 14 16 16 18 18 20 VR (V) 1 1 1 1 1 1.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 1) The Zener voltage is measured 40ms after power is supplied. 2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current (Iz). SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 ZM-PTZ3.6B ~ ZM-PTZ36B Derating curve 1200 Glass epoxy substrate 32x30x1.6(mm) 200 Rise in surface temperature ALUMINA SUBSTRATE 114X124X1.6(mm) 200 Rise in surface temperature Power dissipation(mW) Rise in diode a surface temperature( C) 1.5W Rise in diode a surface temperature( C) 1.5W 1W 800 Ceramic substrate 82x30x1.0(mm) 100 1W 100 0.5W 400 Individual part (not mounted) 0.5W 0 50 87.5 100 150 200 1 10 100 0 1 GLASS EPOXY SUBSTRATE 144X220X1.6(mm) 10 100 0 Ta ( C) Mounting quantity(pcs/substrate) Mounting quantity(pcs/substrate) 0.10 Zener voltage - temp. coefficient characteristics Iz=20mA Iz=40mA Zener voltage characteristics 100m 4.3 4.7 5.1 10m 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 12 11 13 15 16 18 20 22 Temperature coefficient ( %/ C) 0.08 24 27 30 33 36 0.04 Zener current, (A) 125-25 C 0 1m 0 100 -0.04 10 -0.08 10 20 30 40 1 0 5 10 15 20 25 30 35 40 Zener voltage (V) Zener voltage (V) SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 |
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